? semiconductor components industries, llc, 2014 october, 2016 ? rev. 7 1 publication order number: ntd5407n/d ntd5407n, std5407n, nvd5407n power mosfet 40 v, 38 a, single n?channel, dpak features ? low r ds(on) ? high current capability ? low gate charge ? std prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable* ? these devices are pb?free and are rohs compliant applications ? electronic brake systems ? electronic power steering ? bridge circuits maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source v oltage v dss 40 v gate?to?source v oltage v gs 20 v continuous drain current ? r jc steady state t c = 25 c i d 38 a t c = 100 c 27 power dissipation ? r jc steady state t c = 25 c p d 75 w continuous drain current r ja (note 1) steady state t a = 25 c i d 7.6 a t a = 100 c 5.3 power dissipation ? r ja (note 1) steady state t a = 25 c p d 2.9 w pulsed drain current t p = 10 s i dm 75 a operating junction and storage temperature t j , t stg ?55 to 175 c source current (body diode) i s 36 a single pulse drain?to source avalanche energy ? (v dd = 50 v, v gs = 10 v, i pk = 17 a, l = 1 mh, r g = 25 ) eas 150 mj lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal resistance ratings (note 1) parameter symbol max unit junction?to?case (drain) r jc 2.0 c/w junction?to?ambient (note 1) r ja 52 c/w 1. surface mounted on fr4 board using 1 sq in pad size, (cu area 1.127 sq in [2 oz] including traces). www. onsemi.com marking diagram v (br)dss r ds(on) typ i d max (note 1) 40 v 21 m @ 10 v 38 a dpak case 369c style 2 n?channel d s g 1 ayww 54 07ng device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. a = assembly location* y = year ww = work week 5407n = specific device code g = pb?free device std5407nt4g* dpak (pb?free) 2500 / tape & reel 1 2 3 4 ntd5407nt4g dpak (pb?free) 2500 / tape & reel * the assembly location code (a) is front side optional. in cases where the assembly location is stamped in the package, the front side assembly code may be blank. NVD5407NT4G* dpak (pb?free) 2500 / tape & reel
ntd5407n, std5407n, nvd5407n www. onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 39 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 40 v t j = 25 c 1.0 a t j = 100 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 30 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.5 3.5 v gate threshold temperature coefficient v gs(th) /t j ?6.0 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 20 a 21 26 m v gs = 5.0 v, i d = 10 a 32 40 forward transconductance g fs v gs = 10 v, i d = 18 a 15 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 32 v 615 1000 pf output capacitance c oss 173 reverse transfer capacitance c rss 80 total gate charge q g(tot) v gs = 10 v, v ds = 32 v, i d = 38 a 20 nc gate?to?source charge q gs 2.25 gate?to?drain charge q gd 10.5 switching characteristics, v gs = 10 v (note 3) turn?on delay time t d(on) v gs = 10 v, v dd = 32 v, i d = 38 a, r g = 2.5 6.8 ns rise time t r 17 turn?off delay time t d(off) 66 fall time t f 51 switching characteristics, v gs = 5 v (note 3) turn?on delay time t d(on) v gs = 5 v, v dd = 20 v, i d = 20 a, r g = 2.5 10 ns rise time t r 175 turn?off delay time t d(off) 13 fall time t f 23 drain?source diode characteristics (note 2) forward diode voltage v sd v gs = 0 v, i s = 5.0 a t j = 25 c 0.9 1.1 v t j = 125 c 0.75 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 15 a 38 ns charge time t a 20.5 discharge time t b 17 reverse recovery charge q rr 40 nc product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
ntd5407n, std5407n, nvd5407n www. onsemi.com 3 typical performance curves t j = 100 c 02 v ds , drain?to?source voltage (volts) i d, drain current (amps) 0 figure 1. on?region characteristics 3 20 0 figure 2. transfer characteristics v gs , gate?t o?source voltage (volts) figure 3. on?resistance vs. gate?to?source voltage r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 0 ?25 25 2 1 0.8 0.6 50 175 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ?55 c 75 t j = 25 c i d = 20 a v gs = 10 v r ds(on), drain?to?source resistance (normalized) t j = 25 c r ds(on), drain?to?source resistance ( ) v gs = 10 v 1 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 100 c 4 v v gs = 5 v v ds 10 v 20 35 3.5 v 4 4 0 v gs = 7 v to 10 v 40 125 100 5 12 v gs , gate?t o?source voltage (volts) 0.02 0.03 0.04 0.08 36 0.01 4 0.045 0.005 0.025 0.015 0.035 10000 610 12 20 30 25 1.8 25 4 5.5 v 0.05 8 40 35 40 60 i d = 38 a t j = 25 c 100 30 5 8 4.5 v 7 59 0.055 0.065 0.075 10 1.6 1.4 1.2 150 13 7 59 20 8 67 0 50 0.105 10 15 60 30 10 50 5 v 6 v 10 30 1000 10 t j = 175 c 0.07 0.06 10 11 0.085 0.095 15
ntd5407n, std5407n, nvd5407n www. onsemi.com 4 typical performance curves figure 7. capacitance variation figure 8. gate?to?source and drain?to?source voltage vs. total charge 1 0 v sd , source?to?drain voltage (volts) figure 9. resistive switching time variation vs. gate resistance i s , source current (amps) v gs = 0 v t j = 25 c 14 figure 10. diode forward voltage vs. current 0.6 13 12 r g , gate resistance (ohms) 1 10 100 10 1 t, time (ns) v ds = 32 v i d = 38 a v gs = 10 v t r t d(on) 1000 t f t d(off) 11 v gs , gate-to-source voltage (volts) 0 9 0 q g , total gate charge (nc) 15 10 15 i d = 36 a t j = 25 c v gs q gs q gd qt 6 3 20 0.3 v ds , drain-to-source voltage (volts) 21 0 35 14 7 v ds v ds = 0 v v gs = 0 v 20 10 10 1200 0 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 0 v gs v ds 30 c rss c iss 100 0.9 1.2 1800 600 5 15 25 15 55 12 28 10 2 3 4 5 6 7 8 9 0.1 1 10 100 1000 0.1 1 10 100 v ds , drain?to?source voltage (v) i d , drain current (a) figure 11. maximum rated forward biased safe operating area r ds(on) limit thermal limit package limit v gs = 10 v single pulse t c = 25 c 1 ms 100 s 10 ms dc 10 s
ntd5407n, std5407n, nvd5407n www. onsemi.com 5 typical performance curves r(t), effective transient thermal resistance t, time (s) figure 12. thermal response 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
ntd5407n, std5407n, nvd5407n www. onsemi.com 6 package dimensions dpak (single gauge) case 369c issue f 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 2: pin 1. gate 2. drain 3. source 4. drain b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ntd5407n/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
|
